dangling bond

См. также в других словарях:

• Dangling bond — In chemistry, a dangling bond is an unsatisfied valence on an immobilised atom. In order to gain enough electrons to fill their valence shells (see also octet rule), many atoms will form covalent bonds with other atoms. In the simplest case, that …   Wikipedia

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• Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… …   Wikipedia

• Amorphous silicon — (a Si) is the non crystalline allotropic form of silicon. Silicon is a four fold coordinated atom that is normally tetrahedrally bonded to four neighboring silicon atoms. In crystalline silicon this tetrahedral structure is continued over a large …   Wikipedia

• Crystallographic defect — Crystalline solids exhibit a periodic crystal structure. The positions of atoms or molecules occur on repeating fixed distances, determined by the unit cell parameters. However, the arrangement of atom or molecules in most crystalline materials… …   Wikipedia

• Hydrogen-terminated silicon surface — A hydrogen terminated silicon surface is a chemically passivated silicon substrate whose native oxide (SiO2) thin film is removed by etching in hydrogen fluoride aqueous solution, leaving the surface silicon atoms covalently bonded to hydrogen.… …   Wikipedia

• Thermal oxidation — In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react… …   Wikipedia

• Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… …   Wikipedia

• Negative bias temperature instability — (NBTI) is a key reliability issue in MOSFETs. It is of immediate concern in p channel MOS devices, since they almost always operate with negative gate to source voltage; however, the very same mechanism affects also nMOS transistors when biased… …   Wikipedia

• Economic Affairs — ▪ 2006 Introduction In 2005 rising U.S. deficits, tight monetary policies, and higher oil prices triggered by hurricane damage in the Gulf of Mexico were moderating influences on the world economy and on U.S. stock markets, but some other… …   Universalium